Self-Pulsation Dynamics in Narrow Stripe Semiconductor Lasers

被引：0
作者：
School of Electronic Engineering, Dublin City University, Dublin 9, Ireland [1 ]
不详 [2 ]
CB3 0HE, United Kingdom
不详 [3 ]
不详 [4 ]
B-1050, Belgium
不详 [5 ]
D-64289, Germany
机构：
[1] School of Electronic Engineering, Dublin City University
[2] Semiconductor Physics Group, Cavendish Laboratory, University of Cambridge, Cambridge
[3] Eblana Photonics, Trinity College Enterprise Centre
[4] Department of Applied Physics and Photonics, Vrije Universiteit Brussels, Brussels
[5] Institut für Angewandte Physik, Technische Universität Darmstadt, Darmstadt
来源：
IEEE J. Quantum Electron. | 2006年 / 4卷 / 381-388期
关键词：
Self-focusing; self-pulsation (SP); semiconductor lasers; spectral-hole burning; wave-guide;
D O I：
10.1109/JQE.2006.9643053
中图分类号：
学科分类号：
摘要：
In this paper, we address the physical origin of self-pulsation in narrow stripe edge emitting semiconductor lasers. We present both experimental time-averaged polarization- resolved near-field measurements performed with a charged-coupled device camera and picosecond time resolved near-field measurements performed with a streak camera. These results demonstrate dynamic spatial-hole burning during pulse formation and evolution. We conclude from these experimental results that the dominant process which drives the self-pulsation in this type of laser diode is carrier induced effective refractive index change induced by the spatial-hole burning. © 1965-2012 IEEE.
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页码：381 / 388
页数：7
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