Spin-polarized electron transport in fractal semiconductor multilayers with two ferromagnetic contacts

被引：0

作者：

Liu, De ^{[1
]}

Kong, Xiao-Jun ^{[1
]}

机构：

[1] College of Physics and Information Engineering, Hebei Normal University, Shijiazhuang 050016, China

来源：

Journal of Applied Physics | 2008年 / 104卷 / 02期

关键词：

We investigate theoretically the transmission properties of electrons tunneling through fractal semiconductor multilayers (FSMs) sandwiched between two ferromagnets (Fs) in the presence of a spin-orbit interaction. Calculations are carried out with and without presumed randomly distributed uncertainties in the semiconductor layer thicknesses. Within the Landauer framework of ballistic transport and using transfer matrix methods; the transmission coefficients of the F/FSM/F heterostructures are numerically calculated and compared with that of periodic semiconductor multilayers (PSMs) again with ferromagnetic contacts. The results indicate that the transmission spectrum of the F/FSM/F heterostructures has partially self-similar properties as well as stability against the effects of random variations in layer thicknesses. Furthermore; compared to the F/PSM/F heterostructures; the transmission spectrum of the F/FSM/F heterostructures exhibits sharp localized transmission peaks and a more marked quantum size effect. Interestingly; for the case with random layer-thickness fluctuations; the transmissions for spin-up and spin-down electrons can be separated when the magnetizations of the left and right ferromagnetic layers are antiparallel. This is quite different from the case without random layer-thickness fluctuations. © 2008 American Institute of Physics;

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摘要：

Journal article (JA)

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