Structural and magnetic properties of V-doped AlN thin films

被引：0

作者：

Ko, K.Y. ^{[1
]}

Barber, Z.H. ^{[1
]}

Blamire, M.G. ^{[1
]}

机构：

[1] Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB2 3QZ, United Kingdom

来源：

Journal of Applied Physics | 2006年 / 100卷 / 08期

关键词：

We report on the structural and magnetic properties of V-doped AlN thin films deposited on c -plane (001) sapphire by reactive cosputtering. The AlN crystal structure was maintained; with decreasing c lattice parameter; as V content increased to 1.58 at. %. No secondary phase was found. Films exhibited ferromagnetism at room temperature with Hc =21.0 Oe. The magnetization corresponded to ∼0.14 μB per V atom and the Curie point was near 300 K. The substitutional solubility of V in AlN is estimated to be ∼1.5 at. % at the growth temperature of 1060 K. The temperature dependence of resistance in the temperature range of 300-400 K corresponded to a highly resistive insulator. © 2006 American Institute of Physics;

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摘要：

Journal article (JA)

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