AC response of AlN/GaN double-barrier resonant tunnelling diodes

被引：0

作者：

Farraj, Rabab Mohammad ^{[1
]}

Ansari, Azhar A. ^{[1
]}

Al-Hazmi, Farag S. ^{[1
]}

机构：

[1] Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589

来源：

International Journal of Nanomanufacturing | 2009年 / 4卷 / 1-4期

关键词：

Capacitance-voltage characteristics; Double-barrier diode; GaN/AlN heterostructure; Nanoelectronic devices; Nanomanufacturing; Resonant tunnelling;

D O I：

10.1504/IJNM.2009.028112

中图分类号：

学科分类号：

摘要：

Capacitance-voltage (C-V) measurements of GaN/AlN double barrier resonant tunnelling diodes have been made at 77K and 300K. Capacitance-frequency measurements were also made over frequency range of 50Hz-1MHz with a view to study the behaviour of traps located in the quantum well. The role of 2DEG has also been taken into account to explain the observed C-V response. The behaviour of the 2DEG as a function of bias voltages has been simulated by using a computer program and it predicts correctly the vanishing of capacitance at higher biases. Copyright © 2009, Inderscience Publishers.

引用

页码：69 / 76

页数：7