Photoacoustic spectroscopy of layered crystals: An enhancement of the photoacoustic signal and its analysis from the perspective of heat generation

被引:0
|
作者
Misztal, Kamil [1 ]
Kopaczek, Jan [1 ]
Kudrawiec, Robert [1 ]
机构
[1] Wroclaw Univ Sci & Technol, Dept Semicond Mat Engn, Wybrzeze Stanislawa Wyspianskiego 27, PL-50370 Wroclaw, Poland
来源
PHOTOACOUSTICS | 2025年 / 41卷
关键词
Photoacoustic spectroscopy; Van der Waals crystals; MoS2; OPTICAL BAND-GAP; ABSORPTION-COEFFICIENTS; SAMPLE THICKNESS; THIN-FILMS; ENERGY; SEMICONDUCTOR; SHIFT;
D O I
10.1016/j.pacs.2024.100668
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
Photoacoustic spectroscopy is a powerful tool for investigating semiconductors and determining some of their basic properties. However, generating a signal that is large enough for the investigated samples is still challenging. To address this, the focus is on enhancing photoacoustic (PA) signal intensity in a non-complex way, which does not require changing any part of an experimental setup. The PA signal intensity enhancement is mainly achieved by manipulating the sample volume and its surroundings. MoS2, a layered material that belongs to the van der Waals crystals was selected due to ease of exfoliation to the proper thickness. A reduction in MoS2 thickness from 112 to 7 mu m, resulted in enhancement of the PA signal by a factor of similar to 50. A simple model has been proposed to describe the results based on thermal processes. Additionally, a method to determine the energy gap in transition metal dichalcogenides from PA measurements is presented.
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页数:11
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