Low temperature impact ionization in indium antimonide high performance quantum well field effect transistors

被引：0
|
作者：
Orr, J.M.S. [1 ]
Buckle, P.D. [2 ]
Fearn, M. [2 ]
Giavaras, G. [3 ]
Wilding, P.J. [2 ]
Bartlett, C.J. [2 ]
Emeny, M.T. [2 ]
Buckle, L. [2 ]
Jefferson, J.H. [2 ]
Ashley, T. [2 ]
机构：
[1] Department of Physics, University of Manchester, Sackville Street, Manchester M60 1QD, United Kingdom
[2] QinetiQ, Saint Andrews Road, Malvern, Worcestershire WR14 3PS, United Kingdom
[3] Department of Physics, University of Lancaster, Lancaster LA1 4YB, United Kingdom
来源：
Journal of Applied Physics | 2006年 / 99卷 / 08期
关键词：
Indium compounds;
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摘要：
Journal article (JA)
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