Dislocations in silicon and D-band luminescence for infrared light emitters

被引：0
作者：
Kveder, V. [1 ]
Kittler, M. [2 ,3 ]
机构：
[1] Institute of Solid State Physics
[2] IHP, 15236 Frankfurt (Oder)
[3] IHP, BTU Joint Lab., 03046 Cottbus
来源：
Materials Science Forum | 2008年 / 590卷
关键词：
D-band luminescence; Dislocations; LED; Silicon;
D O I：
10.4028/www.scientific.net/msf.590.29
中图分类号：
学科分类号：
摘要：
There is a growing demand for a silicon-based light emitters generating a light with a wavelength in of 1.3-1.6 μm range, which can be integrated into silicon chips and used for in-chip opto-electronic interconnects. Among other possibilities, the D1 luminescence at about 1.55 μm, caused by dislocations in Si, can be a suitable candidate for such in-chip light emitters. Here we present a brief review of today knowledge about electronic properties of dislocations in silicon and dislocation-related luminescence in connection with possible application of this luminescence for silicon infrared light-emitting diodes (Si-LEDs).
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页码：29 / 56
页数：27
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