Valence band structure and hole mobility of strained Ge/(111)Si1-xGex

Due to the high carrier mobility and the compatibility with Si process in strained Ge materials, the application of MOS channel in Si-based COMS is one of the important techniques to continue Moore's law. In this paper, we obtained the parameter of the valence band structure in strained Ge/(111)Si1-xGex by kp energy band theory, including the valence-band levels in the point, the splitting energy, the effective masses of the hole. Based on this, the quantitative theoretical relations between the hole mobility/the hole scattering rates and the stress can be obtained. Our quantitative models will provide valuable references to aid in the understanding of strained Ge semiconductor physics and the design of related devices. Copyright © 2015 American Scientific Publishers.