Valence band structure and hole mobility of strained Ge/(111)Si1-xGex

被引:0
|
作者
Song, Jian-Jun [1 ]
He, Zhu [1 ]
Gao, Xiang-Yu [2 ]
Zhang, He-Ming [1 ]
Hu, Hui-Yong [1 ]
Yi, Lv [1 ]
机构
[1] Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an
[2] College of Electronic Science and Engineering, JiLin University, Changchun
关键词
Mobility; Strained Ge; Valence Band;
D O I
10.1166/jctn.2015.4102
中图分类号
学科分类号
摘要
Due to the high carrier mobility and the compatibility with Si process in strained Ge materials, the application of MOS channel in Si-based COMS is one of the important techniques to continue Moore's law. In this paper, we obtained the parameter of the valence band structure in strained Ge/(111)Si1-xGex by kp energy band theory, including the valence-band levels in the point, the splitting energy, the effective masses of the hole. Based on this, the quantitative theoretical relations between the hole mobility/the hole scattering rates and the stress can be obtained. Our quantitative models will provide valuable references to aid in the understanding of strained Ge semiconductor physics and the design of related devices. Copyright © 2015 American Scientific Publishers.
引用
收藏
页码:3201 / 3205
页数:4
相关论文
共 50 条
  • [31] Impact of Surface Passivation on the Electronic Structure and Optical Properties of the Si1-xGex Nanowires
    Lai Xin
    Zhang Xi
    Zhang Yi-Xi
    Xiang Gang
    CHINESE PHYSICS LETTERS, 2015, 32 (02)
  • [32] Two Dimensional Analytical Threshold Voltage Model of Nanoscale Strained Si/Si1-xGex MOSFETs Including Quantum Mechanical Effects
    Siew, Kang Eng
    Heong, Yau Wei
    Anwar, Sohail
    Ismail, Razali
    JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2012, 9 (03) : 441 - 447
  • [33] Band structure of strained Si1-x Gex
    Song Jian-Jun
    Zhang He-Ming
    Hu Hui-Yong
    Xuan Rong-Xi
    Dai Xian-Ying
    ACTA PHYSICA SINICA, 2009, 58 (11) : 7947 - 7951
  • [34] Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs
    Tezuka, T
    Kurobe, A
    Sugiyama, N
    Takagi, S
    THIN SOLID FILMS, 2000, 369 (1-2) : 338 - 341
  • [35] Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires
    Conesa-Boj, S.
    Li, A.
    Koelling, S.
    Brauns, M.
    Ridderbos, J.
    Nguyen, T. T.
    Verheijen, M. A.
    Koenraad, P. M.
    Zwanenburg, F. A.
    Bakkers, E. P. A. M.
    NANO LETTERS, 2017, 17 (04) : 2259 - 2264
  • [36] Longitudinal, transverse, density-of-states, and conductivity masses of electrons in (001), (101) and (111) biaxially-strained-Si and strained-Si1-xGex
    Song JianJun
    Yang Chao
    Zhang HeMing
    Hu HuiYong
    Zhou ChunYu
    Wang Bin
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2012, 55 (11) : 2033 - 2037
  • [37] MBE growth and structural characterization of Si1-yCy/Si1-xGex superlattices
    Zerlauth, S
    Stangl, J
    Darhuber, AA
    Holy, V
    Bauer, G
    Schaffler, F
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 459 - 464
  • [38] Hole Mobility in Arbitrary Orientation/Typical Plane Uniaxially-Strained Si Materials
    Song, Jian-Jun
    Zhu, He
    Zhang, He-Ming
    Hu, Hui-Yong
    Xuan, Rong-Xi
    Shu, Bin
    SILICON, 2016, 8 (03) : 381 - 389
  • [39] Thermoelectric properties of nanostructured Si1-xGex and potential for further improvement
    Bera, Chandan
    Soulier, M.
    Navone, C.
    Roux, Guilhem
    Simon, J.
    Volz, S.
    Mingo, Natalio
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (12)
  • [40] High Hole-Mobility Strained-Ge/Si0.6Ge0.4 P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness
    Hashemi, Pouya
    Hoyt, Judy L.
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (02) : 173 - 175