GaN Power Integration for High Frequency and High Efficiency Power applications: a Review

被引：0
作者：
Sun R. [1 ]
Lai J. [1 ]
Chen W. [1 ]
Zhang B. [1 ]
机构：
[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu
来源：
IEEE Access | 2020年 / 8卷
关键词：
GaN; HEMT; high frequency; power conversion; power integration;
D O I：
10.1109/aCCESS.2020.2967027
中图分类号：
学科分类号：
摘要：
High frequency and high efficiency operation is one of the premier interests in the signal and energy conversion applications. The wide bandgap GaN based devices possess superior properties and have demonstrated exceeding performance than Si or Gaas devices. In order to further exploit the potential of GaN electronics, monolithic power integration is proposed. Firstly, this paper discusses the structure and properties of GaN power devices to explain the choice of lateral integration in the view of GaN power ICs. Then the state-of-the-art performance of GaN power integration in two major application areas is reviewed, which are the microwave power amplification and DC-DC power conversion. The GaN power integration technologies in MMIC platforms are summarized in terms of the gate length, operation frequency and power added efficiency of ICs. On the other hand, the smart GaN power IC platforms have boosted the development of DC-DC power converters. Demonstrations of high frequency (>1 MHz) and high efficiency (>95 %) converters with various kinds of integration technology and topology are reviewed. Lastly novel integration schemes and methods are introduced to stimulate new thoughts on GaN power integration road. © 2013 IEEE.
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页码：15529 / 15542
页数：13
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[1]  
Gueguen P., How power electronics will reshape to meet the 21st century challenges, Proc. IEEE 27th Int. Symp. Power Semiconductor Devices IC's (ISPSD), pp. 17-20, (2015)
[2]  
Murari B., Rossi D., Power ICs in motor control, Proc. 8th Int. Symp. Power Semiconductor Devices ICs (ISPSD), pp. 29-32, (2002)
[3]  
Murari B., Bertotti F., Vignola G.A., Andreini A., Smart Power ICs: Technologies and Applications, (2002)
[4]  
Baliga B., An overview of smart power technology, IEEE Trans. Elec-tron Devices, 38, 7, pp. 1568-1575, (1991)
[5]  
Letavic T., Arnold E., Simpson M., Aquino R., Bhimnathwala H., Egloff R., Emmerik A., Wong S., Mukherjee S., High performance 600 v smart power technology based on thin layer silicon-on-insulator, Proc. 9th Int. Symp. Power Semiconductor Devices IC's, pp. 49-52, (2002)
[6]  
Chow T.P., Omura I., Higashiwaki M., Kawarada H., Pala V., Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors, IEEE Trans. Electron Devices, 64, 3, pp. 856-873, (2017)
[7]  
Wong K.-Y., Chen W., Liu X., Zhou C., Chen K.J., GaN smart power IC technology, Phys. Status Solidi B, 247, 7, pp. 1732-1734, (2010)
[8]  
Mishra U., Parikh P., Wu Y.-F., AlGaN/GaN HEMTs_An overview of device operation and applications, Proc. IEEE, 90, 6, pp. 1022-1031, (2002)
[9]  
Tsai C., Wang Y., Kwan M., Chen P., Yao F., Liu S., Smart GaN platform: Performance & challenges, IEDM Tech. Dig., pp. 3311-3314, (2017)
[10]  
Chen K., GaN smart power chip technology, Proc. IEEE Int. Conf. Electron Devices Solid-State Circuits (EDSSC), pp. 403-407, (2009)
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