Coupled electrothermal, electromagnetic, and physical modeling of microwave power FETs

被引：26

作者：

Denis, David ^{[1
]}

Snowden, Christopher M. ^{[2
]}

Hunter, Ian C. ^{[1
]}

机构：

[1] School of Electronic and Electrical Engineering, University of Leeds, Leeds,LS2 9JT, United Kingdom

[2] Vice-Chancellor's Department, University of Surrey, Guildford,GU2 7XH, United Kingdom

来源：

IEEE Transactions on Plasma Science | 2008年 / 36卷 / 05期

关键词：

High electron mobility transistors - Power transistors;

D O I：

10.1109/TMTT.2006.875797

中图分类号：

学科分类号：

摘要：

This paper presents a coupled electrothermal, electromagnetic, and physical model for microwave power field-effect transistors (FETs). The resulting model is used to investigate large gate periphery pseudomorphic high electron-mobility transistor devices. The contribution to the output power of each cell of the transistor is simulated, as well as their contribution to the heating of the device. This approach allows the investigation of the interaction between the thermal behavior, the dc bias, and the microwave circuit operating conditions. This paper reveals for the first time a more complex interaction between the thermal and microwave behavior of large-power FETs. © 2006 IEEE.

引用

页码：2465 / 2470