Advancements in 2D layered material memristors: unleashing their potential beyond memory

被引：19
作者：
Nirmal, Kiran A. [1 ]
Kumbhar, Dhananjay D. [2 ]
Kesavan, Arul Varman [3 ]
Dongale, Tukaram D. [2 ,4 ]
Kim, Tae Geun [1 ,4 ]
机构：
[1] Korea Univ, Sch Elect Engn, Seoul, South Korea
[2] Shivaji Univ, Sch Nanosci & Biotechnol, Computat Elect & Nanosci Res Lab, Kolhapur, India
[3] SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Kattankulathur, Tamil Nadu, India
[4] Saveetha Univ, Saveetha Inst Med & Tech Sci, Saveetha Dent Coll & Hosp, Dept Physiol,Funct Mat & Mat Chem Lab, Chennai, Tamil Nadu, India
来源：
NPJ 2D MATERIALS AND APPLICATIONS | 2024年 / 8卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
RANDOM-ACCESS-MEMORY; RANDOM NUMBER GENERATION; 2-DIMENSIONAL MATERIALS; RESISTIVE MEMORY; BILAYER GRAPHENE; MEMTRANSISTORS; HARDWARE; DEVICE; ELECTRONICS; INTEGRATION;
D O I：
10.1038/s41699-024-00522-4
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The scalability of two-dimensional (2D) materials down to a single monolayer offers exciting prospects for high-speed, energy-efficient, scalable memristors. This review highlights the development of 2D material-based memristors and potential applications beyond memory, including neuromorphic, in-memory, in-sensor, and complex computing. This review also encompasses potential challenges and future opportunities for advancing these materials and technologies, underscoring the transformative impact of 2D memristors on versatile and sustainable electronic devices and systems.
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页数：27
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