Electrical characterization of nonvolatile phase-change memory devices using Sb-rich Ge-Sb-Te alloy films

被引：0
|
作者：
Yoon, Sung-Min [1 ]
Choi, Kyu-Jeong [1 ]
Lee, Nam-Yeal [1 ]
Lee, Seung-Yun [1 ]
Park, Young-Sam [1 ]
Yu, Byoung-Gon [1 ]
机构：
[1] IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 11期
关键词：
29;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：7225 / 7231
相关论文
共 50 条
  • [1] Electrical characterization of nonvolatile phase-change memory devices using Sb-rich Ge-Sb-Te alloy films
    Yoon, Sung-Min
    Choi, Kyu-Jeong
    Lee, Nam-Yeal
    Lee, Seung-Yun
    Park, Young-Sam
    Yu, Byoung-Gon
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (11): : 7225 - 7231
  • [2] Effects of barrier layers on the electrical behaviors of phase-change memory devices using Sb-rich Ge-Sb-Te films
    Yoon, Sung-Min
    Choi, Kyu-Jeong
    Park, Sang-Hee Ko
    Lee, Seung-Yun
    Park, Young-Sam
    Yu, Byoung-Gon
    INTEGRATED FERROELECTRICS, 2007, 93 (01) : 75 - +
  • [3] Improvement of operational stability in SET states of phase-change-type nonvolatile memory devices using Sb-rich phase of Ge-Sb-Te alloys
    Yoon, Sung-Min
    Lee, Seung-Yun
    Jung, Soon-Won
    Park, Young-Sam
    Yu, Byoung-Gon
    SOLID-STATE ELECTRONICS, 2009, 53 (05) : 557 - 561
  • [4] Enhanced Memory Behavior in Phase-Change Nonvolatile-Memory Devices Using Multilayered Structure of Compositionally Modified Ge-Sb-Te Films
    Yoon, Sung-Min
    Lee, Seung-Yun
    Jung, Soon-Won
    Park, Young-Sam
    Yu, Byoung-Gon
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [5] CHARACTERZATION OF Ge-Sb-Te PHASE-CHANGE MEMORY MATERIALS
    Iovu, Mihail
    Colomeico, Eduard
    Benea, Vasile
    Harea, Diana
    ADVANCED TOPICS IN OPTOELECTRONICS, MICROELECTRONICS, AND NANOTECHNOLOGIES VI, 2012, 8411
  • [6] Epitaxy of Ge-Sb-Te phase-change memory alloys
    Braun, Wolfgang
    Shayduk, Roman
    Flissikowski, Timur
    Ramsteiner, Manfred
    Grahn, Holger T.
    Riechert, Henning
    Fons, Paul
    Kolobov, Alex
    APPLIED PHYSICS LETTERS, 2009, 94 (04)
  • [7] Epitaxial films for Ge-Sb-Te phase change memory
    Shayduk, R.
    Braun, W.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 2215 - 2219
  • [8] Electrophysical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Devices
    Lazarenko, P. I.
    Kozyukhin, S. A.
    Sherchenkov, A. A.
    Babich, A. V.
    Timoshenkov, S. P.
    Gromov, D. G.
    Zabolotskaya, A. V.
    Kozik, V. V.
    RUSSIAN PHYSICS JOURNAL, 2017, 59 (09) : 1417 - 1424
  • [9] In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys
    Jiang, Ting-Ting
    Wang, Xu-Dong
    Wang, Jiang-Jing
    Zhang, Han-Yi
    Lu, Lu
    Jia, Chunlin
    Wuttig, Matthias
    Mazzarello, Riccardo
    Zhang, Wei
    Ma, En
    FUNDAMENTAL RESEARCH, 2024, 4 (05): : 1235 - 1242
  • [10] Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application
    Wu, Liangcai
    Zhu, Min
    Song, Zhitang
    Lv, Shilong
    Zhou, Xilin
    Peng, Cheng
    Rao, Feng
    Song, Sannian
    Liu, Bo
    Feng, Songlin
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 358 (17) : 2409 - 2411
12345