Nanomechanical Thermal Analysis of Indium Films Using Silicon Microcantilevers

被引：8

作者：

Yim, Changyong ^{[1
]}

Yun, Minhyuk ^{[1
]}

Kim, Seonghwan ^{[2
]}

Jung, Namchul ^{[1
]}

Lim, Sang-Hoon ^{[1
]}

Lee, Moonchan ^{[1
]}

Rhee, Shi-Woo ^{[1
]}

Thundat, Thomas ^{[2
]}

Jeon, Sangmin ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Pohang 790784, Gyungbuk, South Korea

[2] Univ Alberta, Dept Chem & Mat Engn, Edmonton, AB T6G 2V4, Canada

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

THIN-FILMS; GLASS-TRANSITION; MELTING BEHAVIOR; STRESS; NANOCRYSTALS; TEMPERATURE; CANTILEVERS; CURVATURE; SENSORS; GROWTH;

D O I：

10.1143/JJAP.51.08KB07

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium thin films of different thicknesses were vacuum-deposited onto silicon microcantilevers. The temperature-dependent variations in the resonance frequency and deflection of the cantilevers were measured simultaneously and were used to determine the melting and crystallization temperatures of the indium films. The melting temperatures of the indium films were identical to that of bulk indium, whereas the crystallization temperatures decreased as the film thickness decreased. The reduction in crystallization temperature with decreasing thickness can be attributed to the tendency of thin films to homogeneously nucleate on nonwetting surfaces. Finally, the temperature-dependent variations in the Young's modulus and surface stress of the indium film were calculated. (C) 2012 The Japan Society of Applied Physics

引用

页数：4