Strain-relaxed Si1-xGex and strained Si grown by sputter epitaxy

被引：0
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作者：
Hanafusa, Hiroaki [1 ]
Kasamatsu, Akifumi [2 ]
Hirose, Nobumitsu [2 ]
Mimura, Takashi [2 ]
Matsui, Toshiaki [2 ]
Suda, Yoshiyuki [1 ]
机构：
[1] Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
[2] National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 4 PART 2期
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摘要：
Journal article (JA)
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页码：3020 / 3023
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