Surface characterization of GaN(0001) grown by liquid phase epitaxy using coaxial impact-collision ion scattering spectroscopy

被引：0
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作者：
Suto, Hirofumi [1 ]
Fujii, Shunjiro [1 ]
Kawamura, Fumio [1 ]
Yoshimura, Masashi [1 ]
Kitaoka, Yasuo [2 ]
Mori, Yusuke [1 ]
Honda, Shin-Ichi [1 ]
Katayama, Mitsuhiro [1 ]
机构：
[1] Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
[2] Frontier Research Center, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 9 PART 1期
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页码：7281 / 7284
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