Magnetotransport in 2D structures n-InGaAs/GaAs with double quantum wells in the vicinity of insulator to quantum Hall effect regime transition

被引：0
|
作者：
Arapov, Yu.G.
Karskanov, I.V.
Haras, G.I.
Neverov, V.N.
Shelushinina, N.G.
Yakunin, M.V.
机构：
来源：
Fizika Nizkikh Temperatur (Kharkov) | 2009年 / 35卷 / 01期
关键词：
Electron-electron interactions;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：44 / 58
相关论文
共 50 条
  • [1] Magnetotransport in two-dimensional n-InGaAs/GaAs double-quantum-well structures near the transition from the insulator to the quantum Hall effect regime
    Arapov, Yu. G.
    Karskanov, I. V.
    Harus, G. I.
    Neverov, V. N.
    Shelushinina, N. G.
    Yakunin, M. V.
    LOW TEMPERATURE PHYSICS, 2009, 35 (01) : 32 - 43
  • [2] Quantum effects peculiarities in 2D-structures GaAs/n-InGaAs/GaAs with double quantum wells
    Arapov, Yu.G.
    Yakunin, M.V.
    Gudina, S.V.
    Karskanov, I.V.
    Neverov, V.N.
    Harus, G.I.
    Shelushinina, N.G.
    Podgornyh, S.M.
    Zvonkov, B.N.
    Uskova, E.A.
    Fizika Nizkikh Temperatur (Kharkov), 2007, 33 (2-3): : 217 - 221
  • [3] Insulator-quantum Hall transition in n-InGaAs/GaAs heterostructures
    Savelyev, A. P.
    Gudina, S. V.
    Arapov, Yu. G.
    Neverov, V. N.
    Podgonykh, S. M.
    Yakunin, M. V.
    LOW TEMPERATURE PHYSICS, 2017, 43 (04) : 491 - 494
  • [4] Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures
    Yu. G. Arapov
    S. V. Gudina
    A. S. Klepikova
    V. N. Neverov
    S. G. Novokshonov
    G. I. Kharus
    N. G. Shelushinina
    M. V. Yakunin
    Journal of Experimental and Theoretical Physics, 2013, 117 : 144 - 152
  • [5] Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures
    Arapov, Yu. G.
    Gudina, S. V.
    Klepikova, A. S.
    Neverov, V. N.
    Novokshonov, S. G.
    Kharus, G. I.
    Shelushinina, N. G.
    Yakunin, M. V.
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2013, 117 (01) : 144 - 152
  • [6] The effect of infrared radiation on quantum magnetotransport in n-InGaAs/GaAs with two strongly coupled quantum wells
    Gudina, S. V.
    Arapov, Yu. G.
    Neverov, V. N.
    Podgornykh, S. M.
    Yakunin, M. V.
    LOW TEMPERATURE PHYSICS, 2013, 39 (04) : 374 - 377
  • [7] Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells
    Arapov, Yu.G.
    Gudina, S.V.
    Neverov, V.N.
    Podgornykh, S.M.
    Yakunin, M.V.
    Fizika Nizkikh Temperatur, 2013, 39 (01): : 58 - 65
  • [8] Features of quantum effects in two-dimensional GaAs/n-InGaAs/GaAs structures with double quantum wells
    Arapov, Yu. G.
    Yakunin, M. V.
    Gudina, S. V.
    Karskanov, I. V.
    Neverov, V. N.
    Harus, G. I.
    Shelushinina, N. G.
    Podgornykh, S. M.
    Zvonkov, V. N.
    Uskova, E. A.
    LOW TEMPERATURE PHYSICS, 2007, 33 (2-3) : 156 - 159
  • [9] Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with strongly coupled double quantum wells
    Arapov, Yu. G.
    Gudina, S. V.
    Neverov, V. N.
    Podgornykh, S. M.
    Yakunin, M. V.
    LOW TEMPERATURE PHYSICS, 2013, 39 (01) : 43 - 49
  • [10] Transport properties of 2D electron gas in an n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced hall insulator-quantum hall liquid transition
    Arapov, Yu.G.
    Gudina, S.V.
    Harus, G.I.
    Neverov, V.N.
    Shelushinina, N.G.
    Yakunin, M.V.
    Podgornyh, S.M.
    Uskova, E.A.
    Zvonkov, B.N.
    International Journal of Nanoscience, 2007, 6 (3-4) : 173 - 177
12345