Piezoelectric properties of epitaxial NaNbO3 thin films deposited on (001)SrRuO3/Pt/MgO substrates

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Mino, Takuya [1 ]
Kuwajima, Shuichiro [1 ,2 ]
Suzuki, Takaaki [1 ]
Kanno, Isaku [1 ]
Kotera, Hidetoshi [1 ]
Wasa, Kiyotaka [1 ]
机构
[1] Department of Micro Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
[2] Nano-Medicine Merger Education Unit, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Sodium niobate (NaNbO3; NN) thin films were deposited on (001)SrRuO3/Pt/MgO substrates by rf magnetron sputter deposition. The X-ray diffraction (XRD) pattern of the sputtered NN thin films showed epitaxial growth with a (001)-oriented perovskite structure. From the reciprocal space maps; the lattice parameters of the in-plane and out-of-plane directions were a = 0.392 nm and c = 0.395 nm; respectively. The relative dielectric constant Εr and the range of the dielectric loss tan δ were about 270 and 0.05-0.13 at 1kHz; respectively. The P-E hysteresis loop showed clear ferroelectricity with spontaneous polarization Ps of 20 μC/cm 2 and coercive electric field Ec of 50kV/cm. The transverse piezoelectric properties were evaluated from the tip displacement of NN/MgO unimorph cantilevers. The transverse piezoelectric coefficient e 31* (= d31/s11E) was -0.9 C/m2; which is almost compatible with that of the bulk NN ceramics. The tip deflection showed typical butterfly curves owing to the polarization reversal; indicating that the sputtered NN thin films had a high piezoelectric performance. © 2007 The Japan Society of Applied Physics;
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页码:6960 / 6963
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