Effect of novel non-inhibitor slurry on chemical mechanical polishing properties of copper interconnect copper film based on experiments and theoretical calculations

In order to simplify the component of copper slurry during chemical mechanical polishing (CMP) and improve the surface corrosion inhibition efficiency, anionic surfactant dodecylbenzene sulfonic acid (DBSA) and nonionic surfactant decyl glucoside (DG) as mixed surfactants were used instead of inhibitors, and the corrosion inhibition properties were thoroughly studied by experiments and theoretical calculations. Polishing experiments and surface morphology tests show that the mixed surfactants can effectively enhance the surface quality after CMP compared with traditional inhibitor TAZ. Electrochemical experiments show that DG and DBSA can form a dense passivation film on the Cu surface to prevent corrosion. The inhibition efficiency of mixed surfactants is as high as 95 %. The theoretical calculations indicate that DBSA and DG form a stable long-chain structure, which leads to a higher adsorption energy, a denser passivation film, and stronger corrosion inhibition, in agreement with the experimental findings. These studies confirmed the stronger inhibitory effect of mixed surfactant on Cu film CMP and provided a new reference for the design of simplified slurry without inhibitor components.