Advanced Compact High-Power InGaAs HEMT Self-Oscillator Active Integrated Antenna for IoT Applications

被引:0
|
作者
El Moudden, Hanaa [1 ]
Elhamadi, Taj-Eddin [1 ]
El Bakkali, Moustapha [1 ]
Touhami, Naima A. [1 ]
机构
[1] Team Elect & Smart Syst, Fac Sci, Dept Phys, Lab Intelligent & Syst Design, Tetouan, Morocco
关键词
GAN/ALGAN HEMT;
D O I
10.2528/PIERL24091704
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a new negative resistance self-oscillator based on an integrated active antenna and InGaAs HEMT technology, specifically designed for Internet of Things (IoT) applications. A key aspect of this design lies in the series integration of the active circuit and the antenna patch. The fabrication and testing were carried out on an FR4 substrate with a thickness of 0.8 mm. The Harmonic Balance numerical method, implemented in Advanced Design System tool, was used for the optimization and co-simulation of the system. After simulation and measurement, the proposed self-oscillator, with a compact size of 3.4x3 cm2, produced very significant results. The simulated output power reached 12.87 dBm at a frequency of 3.07 GHz, while the measured output power was 12.85 dBm at 3.04 GHz, demonstrating high output power capabilities with a recorded phase noise of -78 dBc/Hz at 10 MHz. The qualitative and quantitative performance of the proposed self-oscillator antenna makes it particularly suitable for applications such as satellite mobile communications, GPS, telemetry, and telemedicine.
引用
收藏
页码:55 / 60
页数:6
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