Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering

被引：0

作者：

Chakravorty, Anusmita ^{[1
]}

Boulle, Alexandre ^{[2
]}

Debelle, Aurélien ^{[3
]}

Monnet, Isabelle ^{[4
]}

Manna, Gouranga ^{[5
]}

Saha, Pinku ^{[6
]}

Mukhopadhyay, Mrinmay Kumar ^{[7
]}

Kabiraj, Debdulal ^{[1
]}

机构：

[1] Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi,110067, India

[2] Institut de Recherche sur les Céramiques (IRCER), CNRS UMR 7315, 12 rue Atlantis, Cedex, Limoges,87068, France

[3] IJCLab, Université Paris-Saclay, CNRS/IN2P3, Institut de Physique des 2 Infinis Irène Joliot-Curie, Orsay,91405, France

[4] ENSICAEN, UNICAEN, CEA, CNRS, Centre de recherche sur les Ions, les matériaux et la photonique, Normandie Univ, Caen,14000, France

[5] Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Rachenahalli Lake Rd, Jakkur, Karnataka, Bengaluru,560064, India

[6] National Centre for High Pressure Studies, Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur Campus, Mohanpur, West Bengal, Nadia,741246, India

[7] Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata,700064, India

来源：

Journal of Materials Science | 2022年 / 57卷 / 43期

关键词：

D O I：

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中图分类号：

学科分类号：

摘要：

引用

页码：20309 / 20319

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