Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering

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作者：
Chakravorty, Anusmita [1 ]
Boulle, Alexandre [2 ]
Debelle, Aurélien [3 ]
Monnet, Isabelle [4 ]
Manna, Gouranga [5 ]
Saha, Pinku [6 ]
Mukhopadhyay, Mrinmay Kumar [7 ]
Kabiraj, Debdulal [1 ]
机构：
[1] Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi,110067, India
[2] Institut de Recherche sur les Céramiques (IRCER), CNRS UMR 7315, 12 rue Atlantis, Cedex, Limoges,87068, France
[3] IJCLab, Université Paris-Saclay, CNRS/IN2P3, Institut de Physique des 2 Infinis Irène Joliot-Curie, Orsay,91405, France
[4] ENSICAEN, UNICAEN, CEA, CNRS, Centre de recherche sur les Ions, les matériaux et la photonique, Normandie Univ, Caen,14000, France
[5] Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Rachenahalli Lake Rd, Jakkur, Karnataka, Bengaluru,560064, India
[6] National Centre for High Pressure Studies, Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur Campus, Mohanpur, West Bengal, Nadia,741246, India
[7] Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata,700064, India
来源：
Journal of Materials Science | 2022年 / 57卷 / 43期
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页码：20309 / 20319
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