A fully-integrated 60-GHz 8-element phased-array transceiver with embedded antenna T/R switch in 65-nm CMOS

被引:0
|
作者
Feng, Jing [1 ,4 ]
Duan, Haipeng [1 ,4 ]
Zhang, Tao [3 ,4 ]
Lu, Lin [1 ,4 ]
Luo, Lei [4 ]
Liang, Yue [1 ,4 ]
Chen, Xin [1 ,4 ]
Cheng, Depeng [4 ]
He, Long [4 ]
Wu, Xu [1 ,2 ,4 ]
Fan, Xiangning [1 ]
Li, Lianming [1 ,2 ,4 ]
机构
[1] Southeast Univ, Sch Informat Sci & Engn, Nanjing 210096, Peoples R China
[2] Southeast Univ, Natl Mobile Commun Res Lab, Nanjing 210096, Peoples R China
[3] Xidian Univ, Sch Integrated Circuits, Key Lab Analog Integrated Circuits & Syst, Minist Educ, Xian 710071, Peoples R China
[4] Purple Mt Labs, Nanjing 211111, Peoples R China
关键词
CMOS; Transmit/receiver (T/R) switch; Phased array; Power amplifier (PA); Low noise amplifier (LNA); Phase shifter (PS); 60 GHZ COMMUNICATION; 5G; TRANSMITTER; GENERATION; GB/S; PAE;
D O I
10.1016/j.mejo.2024.106475
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an 8-element phased-array heterodyne transceiver (TRX) chip for 60-GHz wireless applications. The chip integrates transmit/receive (T/R) elements, bi-directional variable-gain driving amplifiers (BIVGDAs), up/down mixing chains, and the local oscillator (LO) chain. To support the time division duplexing (TDD) operation and increase output power, a low-loss compact on-chip antenna T/R switch is introduced by embedding it in the power amplifier (PA) power combiner, thereby achieving a high transmitter (TX) output power and low receiver (RX) noise figure (NF), respectively. Fabricated in a 65-nm CMOS process, the proposed phased array TRX chip occupies an area of 5.1 mm x 2.5 mm. With measurements, the TX path provides a 32-dB maximum conversion gain, an 11.3-dBm OP 1dB , and a 16-dBm P sat , respectively. The RX path achieves a peak gain of 24 dB and an NF of 6.5-9 dB across 57-66 GHz. With the 16-QAM modulation, a 7.04 Gb/s data rate is demonstrated.
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页数:9
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