Resistivity characteristics near the metal-insulator transition in the half-filled Anderson-Hubbard model

被引：0
作者：
Nguyen, Thi-Hai-Yen [1 ]
Hoang, Anh-Tuan [1 ]
Le, Duc-Anh [2 ]
机构：
[1] Vietnam Acad Sci & Technol, Inst Phys, 10 Dao Tan, Hanoi, Vietnam
[2] Hanoi Natl Univ Educ, Fac Phys, 136 Xuan Thuy, Hanoi, Vietnam
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2024年
关键词：
Dc resistivity; Mott and Anderson metal-insulator transitions; Typical medium theory; MEAN-FIELD THEORY; DISORDER; LOCALIZATION; CONDUCTIVITY;
D O I：
10.1007/s40042-024-01186-5
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this study, we calculate the dc resistivity of the half-filled disordered Hubbard model near the Mott and Anderson metal-insulator transitions. We employ the standard Kubo formula with typical medium dynamical mean field theory to perform our calculations. Our investigation explores the effects of random potential, on-site Coulomb interaction, and temperature on the dc resistivity within the model. In addition, we highlight and discuss the distinct resistivity behaviors observed near the Mott and Anderson transitions.
引用
收藏
页码：825 / 829
页数：5
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