Ballistic transport properties in spin field-effect transistors

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作者：
Jiang, K.M. [1 ]
Yang, Jun [2 ]
Zhang, R. [1 ]
Wang, Hongyan [1 ]
机构：
[1] Department of Physics, Shanghai Maritime University, Shanghai 200135, China
[2] Institute of Sciences, PLA University of Science and Technology, Nanjing 210007, China
来源：
| 1600年 / American Institute of Physics Inc.卷 / 104期
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