High mobility pentacene thin-film transistors on photopolymer modified dielectrics

被引：0

作者：

Chou, Wei-Yang ^{[1
]}

Kuo, Chia-Wei ^{[2
]}

Cheng, Horng-Long ^{[1
]}

Chen, Yi-Ren ^{[1
]}

Yang, Feng-Yu ^{[3
]}

Shu, Dun-Yin ^{[3
]}

Liao, Chi-Chang ^{[3
]}

Tang, Fu-Ching ^{[2
]}

机构：

[1] Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan

[2] Department of Physics, National Cheng Kung University, Tainan 701, Taiwan

[3] Material and Chemical Research Laboratories, Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 10 A期

关键词：

An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm2 V-1 s-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor; pentacene; could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method; and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm2 V -1 s-1. © 2006 The Japan Society of Applied Physics;

D O I：

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中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：7922 / 7924

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