p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration

The lack of low temperature processable, high-performance p-type oxide thin-film transistors (TFTs) limits their implementation in monolithically integrated back-end-of-line (BEOL) CMOS circuitries. In this work, we demonstrate a reactive magnetron-sputtered SnO x TFT with unprecedented hole field-effect mobility (mu FE-hole ) of 38.7 cm2/V<middle dot>s, as well as an on/off current ratio (I on/off ) of 2.5 x 103 and lower subthreshold swing (SS) of 240.9 mV/dec when compared to reported works on p-type oxide-based TFTs. Material characterization correlated with the SnO x TFTs' electrical behavior elucidated the performance to the structural and compositional phase modulation of the SnO x thin films, modulated by O2 partial pressure during deposition and post-encapsulation annealing. By integrating the SnO x TFT with an IGZO TFT in both planar and stacked complementary FET-like form, we demonstrated a true oxide-based CMOS inverter, achieving one of the highest voltage gains of 57 and the lowest static power consumption down to 34 pW for both on and off states.