Enhanced photoluminescence intensity of buried InGaAs/GaAs(001) quantum wells by sulfur termination

被引：0
作者：
Ma, Zhao [1 ,2 ]
Mano, Takaaki [1 ]
Ohtake, Akihiro [1 ]
Kuroda, Takashi [1 ,2 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[2] Kyushu Univ, Grad Sch Engn, Dept Appl Chem, Fukuoka 8190395, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 12期
关键词：
semiconductor; surface treatment; InGaAs; GAAS(001) SURFACE; SE; PASSIVATION; GAAS; SELENIUM; RECONSTRUCTION; TRANSISTOR;
D O I：
10.35848/1347-4065/ad9802
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Sulfur (S) termination of III-V semiconductor surfaces is an effective technique for passivating surfaces to prevent oxidation. In this study, we systematically investigated the effects of S termination by (NH4)2Sx treatment on enhancement of the photoluminescence (PL) properties of buried InGaAs/GaAs(001) quantum wells (QWs). X-ray photoelectron spectroscopy (XPS) and PL measurements revealed that the (NH4)2Sx treatment suppresses the formation of surface oxides, especially arsenic oxides, and enhances the PL intensity of QWs. Clear correlation between the PL and XPS results suggests that greater PL intensity is attributable to a reduction in the number of nonradiative recombination centers at the surface caused by arsenic oxide formation. In addition, from the observed temporal changes in PL intensities, we found that the S-terminated surfaces exhibit long-term and high resistance to surface oxidation by air exposure.
引用
收藏
页数：7
相关论文
共 39 条
  • [1] GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - ISSUES AND PROSPECTS FOR APPLICATION
    ASBECK, PM
    CHANG, MCF
    HIGGINS, JA
    SHENG, NH
    SULLIVAN, GJ
    WANG, KC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) : 2032 - 2042
  • [2] Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot
    Berthelot, A.
    Favero, I.
    Cassabois, G.
    Voisin, C.
    Delalande, C.
    Roussignol, Ph.
    Ferreira, R.
    Gerard, J. M.
    [J]. NATURE PHYSICS, 2006, 2 (11) : 759 - 764
  • [3] Bhattacharya P., 1997, Semiconductor Optoelectronic Devices, V2
  • [4] SELENIUM-TERMINATED AND TELLURIUM-TERMINATED GAAS(100) SURFACES OBSERVED BY SCANNING-TUNNELING-MICROSCOPY
    BIEGELSEN, DK
    BRINGANS, RD
    NORTHRUP, JE
    SWARTZ, LE
    [J]. PHYSICAL REVIEW B, 1994, 49 (08): : 5424 - 5428
  • [5] EFFECTS OF NA2S AND (NH4)2S EDGE PASSIVATION TREATMENTS ON THE DARK CURRENT-VOLTAGE CHARACTERISTICS OF GAASPN DIODES
    CARPENTER, MS
    MELLOCH, MR
    LUNDSTROM, MS
    TOBIN, SP
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (25) : 2157 - 2159
  • [6] PASSIVATION OF GAAS(001) SURFACES BY INCORPORATION OF GROUP-VI ATOMS - A STRUCTURAL INVESTIGATION
    CHAMBERS, SA
    SUNDARAM, VS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 2256 - 2262
  • [7] Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al2O3 passivation
    Chen, Andrew
    Juang, Bor-Chau
    Ren, Dingkun
    Liang, Baolai
    Prout, David L.
    Chatziioannou, Arion E.
    Huffaker, Diana L.
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (09)
  • [8] Study of InP Surfaces after Wet Chemical Treatments
    Cuypers, D.
    van Dorp, D. H.
    Tallarida, M.
    Brizzi, S.
    Conard, T.
    Rodriguez, L. N. J.
    Mees, M.
    Arnauts, S.
    Schmeisser, D.
    Adelmann, C.
    De Gendt, S.
    [J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (01) : N3016 - N3022
  • [9] First-principles simulation of Se and Te adsorbed on GaAs(001)
    Gundel, S
    Faschinger, W
    [J]. PHYSICAL REVIEW B, 1999, 59 (08) : 5602 - 5611
  • [10] Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion
    Ha, Neul
    Mano, Takaaki
    Chou, Ying-Lin
    Wu, Yu-Nien
    Cheng, Shun-Jen
    Bocquel, Juanita
    Koenraad, Paul M.
    Ohtake, Akihiro
    Sakuma, Yoshiki
    Sakoda, Kazuaki
    Kuroda, Takashi
    [J]. PHYSICAL REVIEW B, 2015, 92 (07)
1234