Properties of InGaAs deposited on GaAs substrate with two-step growth

被引：0
作者：
Han, Zhi-Ming [1 ,2 ]
Miao, Guo-Qing [1 ]
Zeng, Yu-Gang [1 ]
Zhang, Zhi-Wei [1 ]
机构：
[1] State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun
[2] University of Chinese Academy of Sciences, Beijing
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2015年 / 36卷 / 03期
关键词：
GaAs; InGaAs; MOCVD; Two step growth;
D O I：
10.3788/fgxb20153603.0288
中图分类号：
学科分类号：
摘要：
InxGa1-xAs was deposited on (100) GaAs substrate by MOCVD with the two-step growth. The effects of buffer layer thickness on the surface morphology, crystalline quality, and alloy order degree of the epilayer were analyzed by SEM, AFM, XRD, and Raman spectroscopy, respectively. The distribution of dislocations in epilayer was observed by TEM and the dislocation density was calculated. The experiment results show that the buffer layer thickness of InxGa1-xAs heterostructure has the optimal value. ©, 2015, Chines Academy of Sciences. All right reserved.
引用
收藏
页码：288 / 292
页数：4
相关论文
共 19 条
[1]  
Hoogeveen R.W.M., Van Der A.R.J., Goede A.P.H., Extended wavelength InGaAs infrared (1.0-2.4 μm) detector arrays on SCIAMACHY for space based spectrometry of the earth atmosphere, Infrared Phys. Technol., 42, 1, pp. 1-16, (2001)
[2]  
Cohen M.J., Ettenberg M.H., Lange M.J., Et al., Commercial and industrial applications of indium gallium arsenide near infrared focal plane arrays, 3698, pp. 453-461, (1999)
[3]  
Theodore R.H., Jeffrey B.B., Extended short wavelength spectral response from InGaAs focal plane arrays, 5074, pp. 481-490, (2003)
[4]  
Kleipool Q.L., Jongma R.T., Gloudemans A.M.S., Et al., In-flight proton-induced radiation damage to SCIAMACHY's extended-wavelength InGaAs near-infrared detectors, Infrared Phys. Technol., 50, pp. 30-37, (2007)
[5]  
Rehm R., Schneider H., Schwarz K., Et al., Responsivity and gain in InGaAs/GaAs-QWIPs and GaAs/AlGaAs-QWIPs: A comparative study, 4288, pp. 379-387, (2001)
[6]  
Kaneko Y., Nakagawa S., Takeuchi T., Et al., InGaAs/GaAs vertical-cavity surface-emitting lasers on (311) B GaAs substrate, Electron Lett., 31, 10, pp. 805-806, (1995)
[7]  
Passaseo A., Maruccio G., De Vittorio M., Et al., Wavelength control from 1.25 to 1.4 μm in In<sub>x</sub>Ga<sub>1-x</sub>As quantum dot structures grown by metal organicchemical vapor deposition, Appl. Phys. Lett., 78, 10, pp. 1382-1385, (2001)
[8]  
Yuan K., Radhakrishnan K., Zheng H.Q., Et al., Metamorphic In<sub>0.52</sub>Al<sub>0.48</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As high electron mobility transistors on GaAs with In<sub>x</sub>Ga<sub>1-x</sub>P graded buffer, J. Vac. Sci. Technol. B, 19, 6, pp. 2119-2122, (2001)
[9]  
Kimura T., Ochi S., Ishida T., Et al., Undoped AlInAs grown by metalorgainc chemical vapor deposition as the current-blocking layer of laser diodes, J. Cryst. Growth, 158, pp. 418-424, (1996)
[10]  
Choulis S.A., Andreev A., Merrick M., Et al., Pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm, Appl. Phys. Lett., 82, 8, pp. 1149-1151, (2003)
12