A wideband CMOS variable gain low noise amplifier

被引：0

作者：

Li H. ^{[1
]}

Li Z. ^{[1
]}

Zhang H. ^{[1
]}

Li W. ^{[1
]}

Wang Z. ^{[1
]}

机构：

[1] Institute of RF- and OE-ICS, Southeast University

来源：

High Technology Letters | 2010年 / 16卷 / 02期

关键词：

CMOS; Linear-in-dB; Low noise amplifier (UNA); Wideband;

D O I：

10.3772/j.issn.1006-6748.2010.02.015

中图分类号：

学科分类号：

摘要：

In this paper, a novel structure of linear-in-dB gain control is introduced. Based on this structure, a wideband variable gain low noise amplifier (VGLNA) has been designed and implemented in 0.18 μm RF CMOS technology. The measured results show a good linear-in-dB gain control characteristic with 15 dB dynamic range. It can operate in the frequency range of MHz and consumes 30 mW from 1.8 V power supply. The minimum noise figure is 4.1 dB at the 48~860 maximum gain and the input P1DB is greater than - 16.5dBm. Copyright © by HIGN TECHNOLOGY LETTERS PRESS.

引用

页码：194 / 198

页数：4

共 4 条

[1]

Andersson S., Svensson C., Drugge O., Wideband LNA for a multistandaid wireless receiver in 0.18 μm CMOS, Proceedings of the 29th European Solid-State Circuits Conference, pp. 655-658, (2003)

[2]

Bruccoleri F., Klumperink E.A.M., Nauta B., Noise canceling in wideband CMOS LNAs, Proceedings of the IEEE International Solid-Stare Circuits Conference, pp. 406-407, (2002)

[3]

Razavi B., Design of Analog CMOS Integrated Circuits, (2003)

[4]

Otaka S., Takemura G., Tanimoto H., A low-power low-noise accurate linear-in-dB variable-gain with 500MHz bandwidth, IEEE Journal Solid State Circuit., 35, 12, pp. 1942-1948, (2000)

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