An equivalent circuit model for uni-traveling-carrier photodiode

被引：0

作者：

LI, Xiao-jian ^{[1
]}

ZHANG, Ye-jin ^{[2
]}

LI, Guo-yu ^{[1
]}

TIAN, Li-lin ^{[1
]}

机构：

[1] Institute of Microelectronics, Tsinghua University, Beijing

[2] Institute of Semiconductors, Chinese Academy of Science, Beijing

来源：

Journal of China Universities of Posts and Telecommunications | 2009年 / 16卷 / SUPPL. 1期

基金：

中国国家自然科学基金;

关键词：

circuit model; InGaAs/Inp; photodiode; UTC;

D O I：

10.1016/S1005-8885(08)60360-X

中图分类号：

学科分类号：

摘要：

In this paper, an equivalent circuit model of uni-traveling-carrier photodiode (UTC-PD) is developed. According to the feature of UTC-PD, hole continuity equation is ignored and only electron continuity equation is introduced, which decreases the complexity of the model. The model is based on a simplified structure and can well express the feature of UTC-PD. Several direct current (DC) and alternating current (AC) analyses are performed to test the model, and the results from the model agree well with that of numerical simulation. © 2009 The Journal of China Universities of Posts and Telecommunications.

引用

页码：40 / 44

页数：4

共 13 条

[1]

Ishibashi T., Shimizu N., Kodama S., Et al., Uni-traveling carrier photodiodes, Proceedings of Ultrafast Electronics and Optoelectronics (UEO'97), Mar 17, pp. 166-168, (1997)

[2]

Shimizu N., Watabnabe N., Furuta T., Et al., InP-InGaAs Uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz, IEEE Photonics Technology Letters, 10, 3, pp. 412-414, (1998)

[3]

Ito H., Furuta T., Kodama S., Et al., InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth, Electronics Letters, 36, 21, pp. 1809-1810, (2000)

[4]

Shi J.W., Yu Y.S., Wu C.Y., Et al., Highspeed, high-responsivity, and high-power performance of near ballistic unitraveling-carrier photodiode at 1.55μm wavelength, IEEE Photonics Technology Letters, 17, 9, pp. 1929-1931, (2005)

[5]

Raring J.W., Skogen E.J., Wang C.S., Et al., Design and demonstration of novel QW intermixing scheme for the integration of UTC-type photodiodes with QW-based components, IEEE Journal of Quantum Electronics, 42, 2, pp. 171-181, (2006)

[6]

Jun D.H., Kang I.H., Song J.I., A modified UTC-PD having high speed and efficiency characteristics utilizing a frequency compensation, Proceedings of International Semiconductor Device Research Symposium (ISDRS'03), 2003, Dec 10-12, Washington DC, USA, pp. 86-87, (2003)

[7]

Shi J.W., Li Y.T., Pan C.L., Et al., Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength, Applied Physics Letters, 89, 5, (2006)

[8]

Wu Y.S., Shi J.W., Chiu P.H., Analytical modeling of a high-performance near-ballistic uni-traveling-carrier photodiode at a 1.55 μm wavelength, IEEE Photonics Technology Letters, 18, 8, pp. 938-940, (2006)

[9]

Ishibashi T., Kodama S., Shimizu N., Et al., High-speed response of uni-traveling carrier photodiodes, Japanese Journal of Applied Physics: Part 1, 36, 10, pp. 6263-6268, (1997)

[10]

Chen W., Liu S., PIN avalanche photodiodes model for circuit simulation, IEEE Journal of Quantum Electronics, 32, 12, pp. 2105-2111, (1996)

← 1 2 →