Modeling and characterization of InAsGaAs quantum dot lasers grown using metal organic chemical vapor deposition

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Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia ^{[1
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Journal of Applied Physics | 2007年 / 101卷 / 01期

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We report on the lasing characteristics of three- and five-stack InAsGaAs quantum dot (QD) lasers grown by metal organic chemical vapor deposition. By increasing the number of stacked dot layers to 5; lasing was achieved from the ground state at 1135 nm for device lengths as short as 1.5 mm (no reflectivity coatings). The unamplified spontaneous emission and Z ratio as a function of injection current were also investigated. While the five-stack QD lasers behaved as expected with Z ratios of 2 prior to lasing; the three-stack QD lasers; which lased from the excited state; exhibited Z -ratio values as high as 4. A simple model was developed and indicated that high Z ratios can be generated by three nonradiative recombination pathways: (i) high monomolecular recombination within the wetting layer; (ii) Auger recombination involving carriers within the QDs (unmixed Auger); and (iii) Auger recombination involving both the QD and wetting layer states (mixed Auger); which dominate once the excited and wetting layer states become populated. © 2007 American Institute of Physics;

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Journal article (JA)

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