Effect of laser fluence on the ITO/Mo-Ag/ITO multilayer thin film for a-Si (n)/c-Si(p)/a-Si(p)/Al heterojunction solar cells

被引：1

作者：

Hacini, Abdelbaki ^{[1
]}

Ali, Ahmad Hadi ^{[1
]}

Harkat, Leila ^{[2
]}

Nayan, Nafarizal ^{[3
]}

Adnan, Nurul Nadia ^{[1
]}

Azali, Muhamad Muizzudin ^{[1
]}

Sani, Nooriskandar ^{[1
]}

机构：

[1] Univ Tun Hussein Onn Malaysia, Fac Appl Sci & Technol, Laser & Semicond Res Grp LASERG, Pagoh Educ Hub, Pagoh 84600, Johor, Malaysia

[2] Univ Mohamed Bougara Boumerdes, Fac Sci, Rd Railway Stn, Boumerdes 35000, Algeria

[3] Univ Tun Hussein Onn Malaysia, Microelect & Nanotechnol Shamsuddin Res Ctr MiNT S, Batu Pahat 86400, Johor, Malaysia

来源：

SOLAR ENERGY | 2024年 / 284卷

关键词：

Laser annealing; ITO; Mo; Ag; Heterojunction solar cell; AFORS-HET; TRANSPARENT ELECTRODE; PERFORMANCE; FIGURE; MERIT; TEMPERATURE;

D O I：

10.1016/j.solener.2024.113042

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this study, innovative ITO/Mo-Ag/ITO (IMAI) multilayered thin films were sputtered and annealed via Nd: YAG pulsed laser at different fluences to enhance their physical properties. The structural investigation shows a cubic structure, which was improved by laser annealing. Moreover, it shows that crystallite size enlarged with the increase in laser fluence from 22 to 37 nm. The average optical transmittance improved from 82 to 92 % in the visible range. The AFM and FESEM show a uniform morphology, with granular structure significantly improved by the laser fluence. The surface roughness was decreased from 2.5 to 0.5 nm, and the average grain size was enlarged from 41.2 to 72.3 nm. Electrical resistivity shows a remarkable decrease from 7.18 x 10-4 to 2.01 x 10-5 Omega/cm, followed by an enhancement in the ohmic contact of IMAI/p-Si. The optimized IMAI structure was utilized to simulate an a-Si(n)/c-Si(p)/a-Si(p)/Al heterojunction solar cell as a transparent conducting window (TCW) using AFORS-HET software. Compared to ITO, the IMAI structure shows remarkable conversion performance, which achieved 22.14 %. Consequently, laser annealing improves the thin film properties for solar cell applications.

引用

页数：12