Variation of silicon etching rate in the HF/HNO3/H2O system

被引：0

作者：

Solar Energy Institute, Department of Physics, Shanghai Jiaotong University, Shanghai 200240, China ^{[1
]}

机构：

来源：

Taiyangneng Xuebao | 2008年 / 3卷 / 319-323期

关键词：

Reaction rates - Silicon - Solutions - Temperature;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The silicon etching process in the HF/HNO3/H2O system with abundant HNO3 has been studied. Since the etching rate and the reaction temperature are changing along with the time passed, the process could be divided into five stages. During the whole process, the concentration of F- in the solution decreases gradually. The results of variation of the etching rate showed that there are factors-the heat generated, the concentration of the F-, and the heat exchange between the system and the environment.

引用