Spin-on n-type silicon films using phosphorous-doped polysilanes

被引：0

作者：

Tanaka, Hideki ^{[1
]}

Iwasawa, Haruo ^{[2
]}

Wang, Daohai ^{[2
]}

Toyoda, Naoyuki ^{[1
]}

Aori, Takashi ^{[1
]}

Yudasara, Ichio ^{[1
]}

Matsuki, Yasuo ^{[2
]}

Shimoda, Tatsuya ^{[1
,3
]}

Furusawa, Masahiro ^{[1
]}

机构：

[1] Frontier Device Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi, Nagano 399-0293, Japan

[2] Tsukuba Research Laboratories, JSR Corporation, 25 Miyukigaoka, Tsukuba, Ibaraki 305-0841, Japan

[3] Center for Nano Material and Technology, Japan Advanced Institute of Science and Technology

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 36-40期

关键词：

D O I：

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摘要：

Journal article (JA)

引用

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[21] Geometries and electronic structures of phosphorous-doped silicon fullerenes: A DFT study [J].

Pichierri, Fabio ;

Kumar, Vijay .

JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 2009, 900 (1-3) :71-76

[22] N-type porous silicon doping using phosphorous oxychloride (POCl3) [J].

El-Bahar, A ;

Stolyarova, S ;

Nemirovsky, Y .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (09) :436-438

[23] Electrical properties of boron- and phosphorous-doped microcrystalline silicon thin films prepared by magnetron sputtering of heavily doped silicon targets [J].

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Weijie Song .

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[24] Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots [J].

Gonzalez-Zalba, M. F. ;

Galibert, J. ;

Iacovella, F. ;

Williams, D. ;

Ferrus, T. .

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[25] Properties of amorphous silicon thin film transistors with phosphorous-doped hydrogenated microcrystalline silicon [J].

Choi, JH ;

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[27] MAGNETORESISTANCE OF HEAVILY DOPED N-TYPE SILICON [J].

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GEISMAR, A .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 :554-&

[28] MAGNETORESISTANCE IN HEAVILY DOPED N-TYPE SILICON [J].

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STELZER, EL .

PHYSICAL REVIEW, 1965, 139 (1A) :A265-&

[29] High temperature thermoelectric properties of laser sintered thin films of phosphorous-doped silicon-germanium nanoparticles [J].

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