Spin-on n-type silicon films using phosphorous-doped polysilanes

被引：0

作者：

Tanaka, Hideki ^{[1
]}

Iwasawa, Haruo ^{[2
]}

Wang, Daohai ^{[2
]}

Toyoda, Naoyuki ^{[1
]}

Aori, Takashi ^{[1
]}

Yudasara, Ichio ^{[1
]}

Matsuki, Yasuo ^{[2
]}

Shimoda, Tatsuya ^{[1
,3
]}

Furusawa, Masahiro ^{[1
]}

机构：

[1] Frontier Device Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi, Nagano 399-0293, Japan

[2] Tsukuba Research Laboratories, JSR Corporation, 25 Miyukigaoka, Tsukuba, Ibaraki 305-0841, Japan

[3] Center for Nano Material and Technology, Japan Advanced Institute of Science and Technology

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 36-40期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

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