Spin-on n-type silicon films using phosphorous-doped polysilanes

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作者：
Tanaka, Hideki [1 ]
Iwasawa, Haruo [2 ]
Wang, Daohai [2 ]
Toyoda, Naoyuki [1 ]
Aori, Takashi [1 ]
Yudasara, Ichio [1 ]
Matsuki, Yasuo [2 ]
Shimoda, Tatsuya [1 ,3 ]
Furusawa, Masahiro [1 ]
机构：
[1] Frontier Device Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi, Nagano 399-0293, Japan
[2] Tsukuba Research Laboratories, JSR Corporation, 25 Miyukigaoka, Tsukuba, Ibaraki 305-0841, Japan
[3] Center for Nano Material and Technology, Japan Advanced Institute of Science and Technology
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 36-40期
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