Photoinduced interdiffusion in nanolayered Se As2 S3 films: Optical and x-ray photoelectron spectroscopic studies

被引：0

作者：

Adarsh, K.V. ^{[1
]}

Sangunni, K.S. ^{[1
]}

Shripathi, T. ^{[2
]}

Kokenyesi, S. ^{[3
]}

Shipljak, M. ^{[4
]}

机构：

[1] Department of Physics, Indian Institute of Science, Bangalore, 560012, India

[2] UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, DIndore 452 017, India

[3] Department of Experimental Physics, University of Debrecen, Bem ter 18/a, Debrecen 4026, Hungary

[4] Uzhgorod National University, Pidhirna 46, Uzhgorod 88000, Ukraine

来源：

Journal of Applied Physics | 2006年 / 99卷 / 09期

关键词：

Photoinduced interdiffusion was observed with above band gap light in nanolayered Se As2 S3 films. It is discussed in terms of the optical parameters such as band gap; Urbach edge (Ee) [F. Urbach; Phys; Rev; 92; 1324; (1953); and B12 (Tauc's parameter) [J. Tauc; Phys. Status Solidi 15; 627 (1966)]. Experimental data of B12 and Ee for as-prepared samples do not show clear correlation implied by the Mott-Davis model [N. F. Mott and E. A. Davis; Electronic Process in Non-crystalline Materials (Clarendon; Oxford; 1979); p. 287]. It is also shown that the optical parameters can be changed with a change in the Se sublayer thickness. Variations of these optical parameters as a function of modulation period and photoinduced interdiffusion were discussed in terms of the quantum confinement effect and changes in the valence and conduction bands. We proposed a model to explain the mechanism of Se diffusion in As2 S3; which suggests that diffusion takes place through the wrong bonds. X-ray photoelectron spectroscopy (XPS) is used to investigate the chemical alternations in the bonding. The proposed model was supported by the XPS data. © 2006 American Institute of Physics;

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