Structural properties of heavily B-doped SiGe thin films for high thermoelectric power

被引:0
|
作者
Department of Materials Science and Engineering, National Defense Academy, Yokosuka 239-8686, Japan [1 ]
不详 [2 ]
机构
来源
Mater. Trans. | / 5卷 / 878-881期
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
Thin films
引用
收藏
相关论文
共 50 条
  • [1] Structural Properties of Heavily B-Doped SiGe Thin Films for High Thermoelectric Power
    Takiguchi, Hiroaki
    Matoba, Akinari
    Sasaki, Kimihiro
    Okamoto, Yoichi
    Miyazaki, Hisashi
    Morimoto, Jun
    MATERIALS TRANSACTIONS, 2010, 51 (05) : 878 - 881
  • [2] Anomalous large thermoelectric power on heavily B-doped SiGe thin films with thermal annealing
    Kawahara, Toshio
    Lee, Sang Min
    Okamoto, Yoichi
    Morimoto, Jun
    Sasaki, Kimihiro
    Hata, Tomonobu
    Japanese Journal of Applied Physics, Part 2: Letters, 2002, 41 (8 B):
  • [3] Anomalous large thermoelectric power on heavily B-doped SiGe thin films with thermal annealing
    Kawahara, T
    Lee, SM
    Okamoto, Y
    Morimoto, J
    Sasaki, K
    Hata, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (8B): : L949 - L951
  • [4] High-Temperature Thermoelectric Measurement of B-Doped SiGe and Si Thin Films
    Shin, Woosuck
    Ishikawa, Masahiko
    Nishibori, Maiko
    Izu, Noriya
    Itoh, Toshio
    Matsubara, Ichiro
    MATERIALS TRANSACTIONS, 2009, 50 (07) : 1596 - 1602
  • [5] Structural and optical properties of nanostructured B-doped ZnO thin films
    Yang, P.-Z. (pzhyang@hotmail.com), 1600, Board of Optronics Lasers, No. 47 Yang-Liu-Qing Ying-Jian Road, Tian-Jin City, 300380, China (24):
  • [6] Epitaxial growth of heavily B-doped SiGe films and interfacial reaction of Ti/B-doped SiGe bilayer structure using rapid thermal processing
    Okada, M
    Kamioka, H
    Matsuo, H
    Fukuda, Y
    Zaima, S
    Kawamura, K
    Yasuda, Y
    THIN SOLID FILMS, 2000, 369 (1-2) : 130 - 133
  • [7] Preparation and Thermoelectric Properties of B-Doped p-Type SiGe Alloys
    Wang Yueyue
    Hu Meihua
    Bi Ning
    Han Pengju
    Zhou Xubiao
    Li Shangsheng
    RARE METAL MATERIALS AND ENGINEERING, 2022, 51 (08) : 2942 - 2946
  • [8] Preparation and Thermoelectric Properties of B-Doped p-Type SiGe Alloys
    Wang, Yueyue
    Hu, Meihua
    Bi, Ning
    Han, Pengju
    Zhou, Xubiao
    Li, Shangsheng
    Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2022, 51 (08): : 2942 - 2946
  • [9] MORPHOLOGY OF HEAVILY B-DOPED DIAMOND FILMS
    MIYATA, K
    KUMAGAI, K
    NISHIMURA, K
    KOBASHI, K
    JOURNAL OF MATERIALS RESEARCH, 1993, 8 (11) : 2845 - 2857
  • [10] Structural and electrical characterization of b-doped microcrystalline silicon thin films
    Saleh, R
    Nickel, NH
    AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, 2002, 715 : 327 - 332