Effect of tin on point defects and oxygen precipitation in Czochralski silicon: Experimental and theoretical studies

被引：0

作者：

机构：

[1] Gao, Chao

[2] Ma, Xiangyang

[3] Zhao, Jianjiang

[4] Yang, Deren

来源：

Ma, X. (mxyoung@zju.edu.cn) | 1600年 / American Institute of Physics Inc.卷 / 113期

关键词：

Point defects;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

收藏

相关论文

共 22 条

[21] The Role of Surface and Subsurface Point Defects for Chemical Model Studies on TiO2: A First-Principles Theoretical Study of Formaldehyde Bonding on Rutile TiO2(110)
Haubrich, Jan
Kaxiras, Efthimios
Friend, Cynthia M.
CHEMISTRY-A EUROPEAN JOURNAL, 2011, 17 (16) : 4496 - 4506
[22] Intrinsic point defects and grown-in microdefects in silicon crystals-comment on: "Intrinsic point defect behaviour in silicon crystals during growth from the melt: A model derived from experimental results'', T. Abe, T. Takahashi, Journal of Crystal Growth 334 (2011) 16
Voronkov, V. V.
Falster, R.
JOURNAL OF CRYSTAL GROWTH, 2012, 351 (01) : 115 - 117