Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors

被引：0
|
作者：
Kim, Jin Soak [1 ]
Kim, Eun Kyu [1 ]
Choi, Won Jun [2 ]
Song, Jin Dong [2 ]
Lee, Jung Il [2 ]
机构：
[1] Quantum-Function Spinics Laboratory, Department of Physics, Hanyang University, Seoul 133-791, Korea, Republic of
[2] Nano-Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 6 B期
关键词：
The energy band structure and defect state of an InAs/InGaAs/GaAs quantum dot-infrared photodetector (QDIP) were characterized by performing capacitance-voltage and deep level transient spectroscopy measurements. We found a confined energy level of the InAs/InGaAs quantum dot in the InGaAs/GaAs quantum well. The confined energy in this QDIP structure was measured to be approximately 340 meV below the barrier edge which is located at the conduction band edge of the GaAs layer. This QDIP structure has also a point defect with an activation energy of 0.60 eV; which may be considered as an EL2 family in a GaAs material. © 2006 The Japan Society of Applied Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：5575 / 5577
相关论文
共 50 条
  • [41] Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors
    Wolde, Seyoum
    Lao, Yan-Feng
    Perera, A. G. Unil
    Zhang, Y. H.
    Wang, T. M.
    Kim, J. O.
    Schuler-Sandy, Ted
    Tian, Zhao-Bing
    Krishna, S.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (24)
  • [42] Design and fabrication of InAs/GaAs quantum-dot resonant-cavity avalanche photodetectors
    Kim, Dong Ho
    Roh, Cheong Hyun
    Song, Hong Joo
    Choi, Yeon-Shik
    Hahn, Cheol-Koo
    Kim, Hoon
    Koh, Jung Hyuk
    Kim, Tae Geun
    CURRENT APPLIED PHYSICS, 2006, 6 (SUPPL. 1) : E172 - E175
  • [43] Heterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectors
    Chakrabarti, S
    Stiff-Roberts, AD
    Bhattacharya, P
    Kennerly, SW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1499 - 1502
  • [44] Temperature dependence of carrier dynamics for InAs/GaAs quantum dot infrared photodetectors
    Huang, CY
    Ou, TM
    Chou, ST
    Tsai, CS
    Wu, MC
    Lin, SY
    Chi, JY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (05): : 1909 - 1912
  • [45] InGaAs-GaAs quantum-dot lasers
    Technical Univ-Berlin, Berlin, Germany
    IEEE J Sel Top Quantum Electron, 2 (196-205):
  • [46] InGaAs-GaAs quantum-dot lasers
    Bimberg, D
    Kirstaedter, N
    Ledentsov, NN
    Alferov, ZI
    Kopev, PS
    Ustinov, VM
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 196 - 205
  • [47] Characteristics of InGaAs quantum dot infrared photodetectors
    Xu, SJ
    Chua, SJ
    Mei, T
    Wang, XC
    Zhang, XH
    Karunasiri, G
    Fan, WJ
    Wang, CH
    Jiang, J
    Wang, S
    Xie, XG
    APPLIED PHYSICS LETTERS, 1998, 73 (21) : 3153 - 3155
  • [48] High-Temperature Operation GaSb/GaAs Quantum-Dot Infrared Photodetectors
    Lin, Wei-Hsun
    Tseng, Chi-Che
    Chao, Kuang-Ping
    Mai, Shu-Cheng
    Kung, Shu-Yen
    Wu, Shug-Yi
    Lin, Shih-Yen
    Wu, Meng-Chyi
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (02) : 106 - 108
  • [49] Characteristics and developments of quantum-dot infrared photodetectors
    Zhang G.-J.
    Shu Y.-C.
    Yao J.-H.
    Shu Q.
    Deng H.-L.
    Jia G.-Z.
    Wang Z.-G.
    Frontiers of Physics in China, 2006, 1 (3): : 334 - 338
  • [50] Quantum-dot infrared photodetectors: Status and outlook
    Martyniuk, P.
    Rogalski, A.
    PROGRESS IN QUANTUM ELECTRONICS, 2008, 32 (3-4) : 89 - 120
12345