Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors

被引：0
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作者：
Kim, Jin Soak [1 ]
Kim, Eun Kyu [1 ]
Choi, Won Jun [2 ]
Song, Jin Dong [2 ]
Lee, Jung Il [2 ]
机构：
[1] Quantum-Function Spinics Laboratory, Department of Physics, Hanyang University, Seoul 133-791, Korea, Republic of
[2] Nano-Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 6 B期
关键词：
The energy band structure and defect state of an InAs/InGaAs/GaAs quantum dot-infrared photodetector (QDIP) were characterized by performing capacitance-voltage and deep level transient spectroscopy measurements. We found a confined energy level of the InAs/InGaAs quantum dot in the InGaAs/GaAs quantum well. The confined energy in this QDIP structure was measured to be approximately 340 meV below the barrier edge which is located at the conduction band edge of the GaAs layer. This QDIP structure has also a point defect with an activation energy of 0.60 eV; which may be considered as an EL2 family in a GaAs material. © 2006 The Japan Society of Applied Physics;
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Journal article (JA)
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页码：5575 / 5577
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