Evidence of electron accumulation at nonpolar surfaces of InN nanocolumns

被引：80

作者：

ISOM-Departamento Ingeniería Electrónica, ETSI Telecomunicación, Universidad Polit´cnica, 28040 Madrid, Spain ^{[1
]}

不详 ^{[2
]}

机构：

[1] ISOM-Departamento Ingeniería Electrónica, ETSI Telecomunicación, Universidad Polit́cnica

[2] Institute of Micro- and Nanotechnologies, TU Ilmenau, 98684 Ilmenau

来源：

Appl Phys Lett | 2007年 / 26卷

关键词：

Atomic force microscopy - Conduction bands - Electric conductivity - Epitaxial growth - Semiconducting indium compounds - Surface reconstruction;

D O I：

10.1063/1.2749871

中图分类号：

学科分类号：

摘要：

High-quality InN nanocolumns grown by molecular beam epitaxy on n -type Si(111) have been electrically characterized by atomic force microscopy. Current-voltage characteristics were measured on InN nanocolumns with similar heights but different diameters. The conductivity scales the nanocolumns reciprocal diameter, pointing to the nanocolumn lateral surface as the main conduction path. These results, opposing those found in undoped GaN nanocolumns where the conductivity is rather independent of the diameter (conduction through the volume), agree well with a model that predicts electron accumulation by Fermi level pinning within the conduction band on nonpolar (m plane) InN surfaces reconstructed under In-rich conditions. © 2007 American Institute of Physics.

引用

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