Study on low stress silicon nitride deposited by PECVD with high frequency

被引：0

作者：

Da, Xiaoli ^{[1
]}

Guo, Xia ^{[1
]}

Guan, Baolu ^{[1
]}

Dong, Limin ^{[1
]}

Shen, Guangdi ^{[1
]}

机构：

[1] Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China

来源：

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2007年 / 27卷 / 01期

关键词：

Chemical vapor deposition - Infrared spectroscopy - Plasma enhanced chemical vapor deposition - Silicon nitride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We studied the relationship between the RF power, the chamber pressure and the film stress for deposited the silicon nitride film by Plasma Enhance Chemical Vapor Deposition (PECVD). It shows that even if using the RF power(13. 56 MHz) as the excitation of plasma, the compressive silicon nitride film can be obtained easily. The low stress film shows the good uniformity through the mapping measurement by variable angle spectroscopic elhpsometry (VASE). The silicon nitride films chemical composition was analyzed by FTIR (Fourier Trans-form Infrared Spectroscopy).

引用

页码：138 / 142