Microstructure of In/Al doping ZnO film by DC magnetron Co-sputtering and thermal oxidation

被引：0

作者：

Liu, Yanhui ^{[1
]}

Yan, Zhi ^{[1
]}

Zhou, Xiying ^{[1
]}

机构：

[1] School of Materials Engineering, Shanghai University of Engineering Science, Shanghai

来源：

Journal of Advanced Microscopy Research | 2012年 / 7卷 / 02期

关键词：

Doped; Films; Microstructure; ZnO;

D O I：

10.1166/jamr.2012.1106

中图分类号：

学科分类号：

摘要：

Doped and undoped ZnO films were prepared by direct current (DC) magnetron co-sputtering and thermal oxidation. Microstructure and chemical element were study by scanning electron microscope with an X-ray energy dispersive spectrometer attachment. Results showed that In doped Zn film was made of spherical particles by DC magnetron sputtering and then grew up a continuous ZnO film by thermal oxidation. Al doped Zn film was made of fine irregular particles by DC magnetron sputtering and then grew up a granular ZnyO film by thermal oxidation. The melting point of doped film changed by dopant was the major reason for different microstructure of In/Al doped ZnO film not only in magnetron sputtering but in thermal oxidation process. The resistance value testing proves the sensitivity of ZnO film was changed with the changes of microstructure morphology in ZnO film by dopant. Copyright © 2012 American Scientific Publishers.

引用

页码：136 / 139

页数：3

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