Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale

被引:0
|
作者
Dydnianski, A. [1 ]
Lopion, A. [1 ,2 ]
Raczynski, M. [1 ]
Kazimierczuk, T. [1 ]
Polczynska, K. E. [1 ]
Pacuski, W. [1 ]
Kossacki, P. [1 ]
机构
[1] Univ Warsaw, Inst Expt Phys, Fac Phys, Ul Pasteura 5, PL-02093 Warsaw, Poland
[2] Univ Munster, Inst Phys, D-48149 Munster, Germany
关键词
Optically detected magnetic resonance; Diluted magnetic semiconductors; Micro-reflectance; Quantum well; CHARGED EXCITONS; HETEROSTRUCTURES;
D O I
10.1016/j.ssc.2024.115755
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work, we study the impact of carrier localization on three quantities sensitive to carrier gas density at the micrometer scale: charged exciton (X+) oscillator strength, local free carrier conductivity, and the Knight shift. The last two are observed in a micrometer-scale, spatially resolved optically detected magnetic resonance experiment (ODMR). On the surface of MBE-grown (Cd,Mn)Te quantum well we identify defected areas in the vicinity of dislocations. We find that these areas show a much lower conductivity signal than the pristine part of the sample, while Knight shift values remain approximately unchanged. We attribute this behavior to carrier localization in the defected regions.
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页数:4
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