A new physics-based self-heating effect model for 4H-SiC MESFETs

被引：8

作者：

Cao, Quan-Jun ^{[1
]}

Zhang, Yi-Men ^{[1
]}

Zhang, Yu-Ming ^{[1
]}

机构：

[1] Key Lab., Xidian University, Education Ministry for Wide Band-Gap Semiconductor Materials and Devices

来源：

Chinese Physics B | 2008年 / 17卷 / 12期

关键词：

4H silicon carbide; Com-puter aided design; Metal semiconductor field effect transistor; Self-heating effect;

D O I：

10.1088/1674-1056/17/12/048

中图分类号：

学科分类号：

摘要：

A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I - V curves with the self-heating effect is obtained. © 2008 Chin. Phys. Soc. and IOP Publishing Ltd.

引用

页码：4622 / 4626

页数：4

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