Impact of mechanical stress on hot-carrier lifetime and time-dependent dielectric breakdown in downscaled complimentary metal-oxide-semiconductor

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作者：
Semiconductor Company, Toshiba Corporation, 580-1 Horikawa-cho, Saiwai-ku, Kawasaki 212-8520, Japan [1 ]
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来源：
Jpn. J. Appl. Phys. | / 2卷
关键词：
Complimentary metal oxide semiconductors - Highly reliable systems - Hot carrier injection - Hydrodynamic simulation - Physical mechanism - Shallow trench isolation - Strong correlation - Time dependent dielectric breakdown;
D O I：
021206
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