Compare of total-dose irradiation effects between CMOS 4000 and 54HC devices

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Xinjiang Technical Institute of Physics and Chemistry, Urumqi 830011, China ^{[1
]}

不详 ^{[2
]}

不详 ^{[3
]}

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来源：

He Jishu | 2008年 / 5卷 / 348-351期

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摘要：

By irradiating CMOS 4000 and 54HC series gate circuits under different biases, characteristics of total dose radiation responses of the devices were compared and mechanisms of the different radiation effects to the two kinds of circuits were investigated. The radiation tolerance testing methods and evaluating standards of the 54HC devices are discussed.

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