The improved electrical contact between a metal and porous silicon by deposition using a supercritical fluid

被引：30
作者：
Department of Electronics Engineering, St. John's University, Taipei 251, Taiwan [1 ]
不详 [2 ]
不详 [3 ]
机构：
[1] Department of Electronics Engineering, St. John's University
[2] Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
[3] Institute of Material Science and Manufacturing, Chinese Culture University
来源：
Nanotechnology | 2006年 / 12卷 / 2968-2971期
关键词：
D O I：
10.1088/0957-4484/17/12/024
中图分类号：
学科分类号：
摘要：
In this study, the use of a CO2 supercritical fluid (SCF) and silver (Ag) nanoparticles is shown to improve the electrical contact between a metal and porous silicon (PS). Earlier problems concerning surface roughness are not observed. Scanning electron microscopy (SEM) showed that SCF processing at 100 °C with Ag nanoparticles of a diameter of about 100nm filled the pores of PS. Separate experiments using different concentrations of the silver precursor in the process showed that the size and morphology of the nanoparticles could be controlled. Because of the large reduction in contact resistance that is produced, it is possible to observe a nonlinear current-voltage characteristic at room temperature. © 2006 IOP Publishing Ltd.
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页码：2968 / 2971
页数：3
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