High peak power 808 nm vertical-cavity surface-emitting laser array

被引：0

作者：

Zhang, Jin-Sheng ^{[1
,2
]}

Liu, Xiao-Li ^{[3
]}

Cui, Jin-Jiang ^{[4
]}

Ning, Yong-Qiang ^{[1
]}

Zhu, Hong-Bo ^{[1
]}

Zhang, Jin-Long ^{[1
]}

Zhang, Xing ^{[1
]}

Wang, Li-Jun ^{[1
]}

机构：

[1] State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun

[2] University of Chinese Academy of Sciences, Beijing

[3] College of Mechanical and Electrical Engineering of Jiaozuo University, Jiaozuo

[4] Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2014年 / 35卷 / 09期

关键词：

808; nm; Arrays; High peak power; VCSEL;

D O I：

10.3788/fgxb20143509.1098

中图分类号：

学科分类号：

摘要：

In order to achieve high output power of 808 nm vertical cavity surface emitting laser (VCSEL) array, the DBR material of 808 nm VCSEL was optimized, and Al content of AlxGa1-xAs was analyzed for the influence on refractive index and absorption. Based on the above analysis, 2 × 2 VCSEL array was designed and fabricated with non-closed ring structure. The peak power of the VCSEL array was tested under waveform analysis method. The peak power is 30 W in 60 ns pulse width and 100 Hz repetition rate, and 9 W in 20 ns pulse width and 100 Hz repetition rate, respectively. The near-field and far-field of VCSEL array were also measured. The beam divergences with full-width at half maximum are 16.9° and 17.6° in the vertical and lateral directions, respectively.

引用

页码：1098 / 1103

页数：5

共 15 条

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